Quantum mechanical and atomic level ab initio calculation of electron transport through ultrathin gate dielectrics of metal oxide semiconductor field effect transistors [Elektronische Ressource] / submitted by Ebrahim Nadimi

Quantum Mechanical and Atomic Level ab initio Calculation of Electron Transport through Ultrathin Gate Dielectrics of Metal-Oxide-Semiconductor Field Effect Transistors By the Faculty of Electrical Engineering and Information Technology at Chemnitz University of Technology approved Dissertation In fulfillment of the requirements for the degree Doktor-Ingenieur (Dr.-Ing.) Submitted by Dipl.-Ing. Ebrahim Nadimi Born in 1.8.1972 in Tehran-Iran Date of submission: 19.11.2007 Examiners: Prof. Dr. rer. nat. Christian Radehaus Prof. Dr. -Ing. habil. John Thomas Horstmann Dr. -Ing. Karsten Wieczorek Date of defense: 16.04.2008Quantenmechanische und atomistische ab initio Berechnung des Elektronentransports durch ultradünne Gatedielektrika in MOSFETs von der Fakultät für Elektrotechnik und Informationstechnik der Technischen Universität Chemnitz genehmigte Dissertation zur Erlangung des akademischen Grades Doktor-Ingenieur (Dr.-Ing.) vorgelegt von Dipl.-Ing. Ebrahim Nadimi geboren am 1.8.1972 in Teheran-Iran eingereicht am: 19.11.2007 Gutachter: Prof. Dr. rer. nat. Christian Radehaus Prof. Dr. -Ing. habil. John Thomas Horstmann Dr. -Ing. Karsten Wieczorek Tag der Verleihung: 16.04.2008Abstract The low dimensions of the state-of-the-art nanoscale transistors exhibit increasing quantum mechanical effects, which are no longer negligible.