Modeling, fabrication and characterization of silicon tunnel field-effect transistors [Elektronische Ressource] / Christian Sandow

Modeling, Fabrication and characterization oF Silicon tunnel Field-eFFect tranSiStorSVon der Fakultät für Mathematik, Informatik und Naturwissenschaften der RWTHAachen University zur Erlangung des akademischen Grades eines Doktors derNaturwissenschaften genehmigte Dissertationvorgelegt vonDiplom-PhysikerChristian Philipp Sandowaus GöttingenBerichter: Universitätsprofessor Dr. Siegfried Mantl Universitätsprof. Lutz FeldTag der mündlichen Prüfung: 8. Juni 2010Diese Dissertation ist auf den Internetseiten der Hochschulbibliothek online verfügbar. AbstractOver the last decades, the continuous down-scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) enabled faster and more complex chips while at the same time the space and power-consump-tion was kept under control. However, in the future, the further reduction of the power consumption per unit area will be restricted by a fundamental limit of the inverse subthreshold swing of MOSFETs, which relates its on/off-current-ratio to the operation voltage. Since logic devices operate at a given on/off-current-ratio, the limited subthreshold swing will prevent further reduction of the operation voltage, which is the main parameter to reduce the power consumption. In this thesis, the Tunnel-FET (TFET) is studied as an alternative switching device which could overcome the physical limit of the subthreshold slope in MOSFETs.