Application of electron energy-loss spectroscopy to ferroelectric thin films [Elektronische Ressource] / von Jingmin Zhang

Application of Electron Energy-LossSpectroscopytoFerroelectric Thin FilmsDissertationzur Erlangung des akademischen Gradesdoctor rerum naturalium (Dr. rer. nat.)vorgelegt derMathematisch-Naturwissenschaftlich-Technischen Fakult˜at(mathematisch-naturwissenschaftlicher Bereich)der Martin-Luther-Universit˜at Halle-Wittenbergvon HerrnJingmin Zhanggeb. am 12.08.1973 in Shandong, ChinaGutachter:1. PD Dr. Hartmut S. Leipner, Martin-Luther-Universit˜at, Halle2. PDDr. DietrichHesse,Max-Planck-Institutfur˜ Mikrostrukturphysik,Halleverteidigt am 16.12.2004Halle (Saale), December 2004urn:nbn:de:gbv:3-000007663[http://nbn-resolving.de/urn/resolver.pl?urn=nbn%3Ade%3Agbv%3A3-000007663]AbstractHigh-resolution electron energy-loss spectroscopy (HR-EELS) and scanning transmissionelectron microscopy (STEM) have been applied to investigate BaTiO /SrTiO ferroelectric3 3multilayers and high-• gate dielectric Y O /Si(001). The experiments are mainly concen-2 3trated on interface reactions and interface defects. The preparation of the STEM specimensandvariousexperimentalparameterswhichhavestrongefiectsontheacquisitionofelectronenergy-loss spectra from the interface are discussed.InBaTiO /SrTiO multilayers,oxygenvacancieshavebeenfoundtopreferablyaggregate3 3at the rough upper interface (SrTiO /BaTiO ) while the lower interface (BaTiO /SrTiO )3 3 3 3is nearly defect free. This flnding has been explained in terms of misflt strain and oxygenvacancyordering.