SRIM Tutorial 4 - Target Damage

. Tutorial #4 - Calculations of Target Damage SRIM Tutorial #1 showed how to construct a CMOS n-well in silicon that would give a peak 18 3concentration of n-type dopants of about ~5x10 atoms/cm , with the peak depth being 250 nm. The question was to select the correct dopant, and to find the implantation energy and dose 2(ions/cm ) to achieve this n-well structure. The Tutorial ended with the selection of phosphorus ions 14at 190 keV, with an implant dose of about 10 ions/cm2 This tutorial will expand on the complicated subject of target damage by ions, and will use the target of Tutorial #1 for this discussion. oNormally, implanting at room-temperature, 300 K, will cause most of the implantation damage to “self-anneal”. The target damage disappears because at room temperature, the lattice atoms have adequate energy to allow simple target damage to regrow back into its original crystalline form. In general, metals self-anneal faster, and insulators slower than the semi-conductor silicon, so a silicon target makes a good example. However, there are no thermal effects in SRIM, so the damage which o is calculated is that which would happen for an implantation at 0 K. Ignoring thermal effects changes the quantity of final damage, but the basic damage types which are discussed will still occur. First, set up the same calculation in SRIM as was used in Lesson #1 : • Click on the SRIM icon on your desktop. • In the opening window, click on TRIM Calculation ...