Wide band gap materials and devices for NO_1tnx, H_1tn2 and O_1tn2 gas sensing applications [Elektronische Ressource] / von Majdeddin Ali

Wide band gap materials and devices for NO , H and O x 2 2gas sensing applications Dissertation zur Erlangung des akademischen Grades Doktor-Ingenieur (Dr.-Ing.) vorgelegt der Fakultät Elektrotechnik und Informationstechnik der Technischen Universität Ilmenau von Dipl.-Ing Majdeddin Ali geboren am 08.09.1976 in Homs, Syrien 1. Gutachter: Univ.-Prof. Dr. rer. nat. habil. Oliver Ambacher, Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg 2. Gutachter: PD Dr.-Ing. habil. Frank Schwierz, TU Ilmenau 3. Gutachter: Dr. Martin Eickhoff, Walter Schottky Institut, TU München Tag der Einreichung: 28.06.2007 Tag der wissenschaftlichen Aussprache: 22.01.2008 urn:nbn:de:gbv:ilm1-2007000323 Abstract III Abstract In this thesis, field effect gas sensors (Schottky diodes, MOS capacitors, and MOSFET transistors) based on wide band gap semiconductors like silicon carbide (SiC) and gallium nitride (GaN), as well as resistive gas sensors based on indium oxide (In O ), have been developed for the detection of reducing gases (H , D ) and 2 3 2 2oxidising gases (NO , O ). The development of the sensors has been performed at x 2the Institute for Micro- and Nanoelectronic, Technical University Ilmenau in co-operation with (GE) General Electric Global Research (USA) and Umwelt-Sensor-Technik GmbH (Geschwenda).