Surface analytical characterization of horizontal and vertical nanotopographies at the silicon, silicon oxide, electrolyte phase boundaries [Elektronische Ressource] / vorgelegt von Michael Lublow

Surface Analytical Characterization of Horizontal and Vertical Nanotopographies at the Silicon/Silicon Oxide/Electrolyte Phase Boundaries Von der Fakultät für Mathematik, Naturwissenschaften und Informatik der Brandenburgischen Technischen Universität Cottbus zur Erlangung des akademischen Grades Doktor der Naturwissenschaften (Dr. rer. nat.) genehmigte Dissertation vorgelegt von Diplom-Physiker Michael Lublow geboren am 03.09.1963 in Neumünster Gutachter: Prof. Dr. Hans-Joachim Lewerenz rof. Dr. Jürgen Reif Gutachter: Prof. Dr. Dieter M. Kolb Tag der mündlichen Prüfung: 10. Dezember 2009 2Abstract Nanotopography development induced by photoelectrochemical in situ conditioning of silicon is followed using a combination of surface sensitive analysis techniques. In an etching study, vertical nanostructure analysis reveals a buried stressed layer within silicon, identified by Brewster-angle analysis (BAA). In conjunction with in system synchrotron radiation photoelectron spectroscopy (SRPES), a superior quality hydrogen terminated Si(111) surface could be prepared by obliteration of the intermediate stressed layer.