Study of the deep levels induced by the high energy proton and neutron irradiation in the structures of high resistivity Si, SiC and GaN ; Didelės energijos protonais ir neutronais sukurtų giliųjų centrų tyrimas didžiavaržio Si, SiC ir GaN dariniuose

VILNIUS UNIVERSITY SEMICONDUCTOR PHYSICS INSTITUTE Vidmantas Kalendra STUDY OF THE DEEP LEVELS INDUCED BY THE HIGH ENERGY PROTON AND NEUTRON IRRADIATION IN THE STRUCTURES OF HIGH RESISTIVITY Si, SiC AND GaN Summary of doctoral thesis Physical science, Physics (02P), Semiconductor Physics (P 265) Vilnius, 2009 The thesis has been prepared in the period from 2005 to 2009 at the Semiconductor Department and Institute of Applied Research, Vilnius University Scientific Supervisor: Prof. Habil. Dr. Vaidotas Kažukauskas (Vilnius University, Physical Sciences, Physics – P02, Semiconductor physics – P265) Consultant: Prof., corresponding member of the Lithuanian Academy of Sciences Juozas Vidmantis Vaitkus (Vilnius University, Physical Sciences, Physics – P02, Semiconductor physics – P265) The thesis will be defended at the Council of Physical Science: Chairman Prof. Habil. Dr. Gintautas Tamulaitis (Vilnius University, Physical Sciences, Physics – 02, Semiconductor physics – P265) Members: Dr. Karolis Kazlauskas (Vilnius University, Physical Sciences, Physics – 02, Semiconductor physics – P265) Prof. Habil. Dr. Eugenijus Šatkovskis (Vilnius Gediminas Technical University, Physical Sciences, Physics – 02, Semiconductor physics – P265) Prof. Habil. Dr. Rimantas Vaišnoras (Vilnius Pedagogical University, Physical Sciences, Physics – 02, Condensed matter – P260) Doc. Dr.