Silicon to nickel silicide longitudinal nanowire heterostructures [Elektronische Ressource] : synthesis, electrical characterization and novel devices / Walter Michael Weber

TECHNISCHE UNIVERSITAT MUNCHENLehrstuhl fur NanoelektronikSilicon to Nickel Silicide LongitudinalNanowire Heterostructures:Synthesis, Electrical Characterization andNovel DevicesWalter Michael WeberVollst andiger Abdruck der von der Fakult at fur Elektrotechnik undInformationstechnik der Technischen Universit at Munc hen zur Erlangungdes akademischen Grades einesDoktor-Ingenieursgenehmigten Dissertation.Vorsitzender: Univ.-Prof. Dr. Ing. Markus-Christian AmannPrufer der Dissertation:1. Univ.-Prof. Dr. Paolo Lugli, Ph.D.2. Univ.-Prof. Dr. rer. nat. Henning RiechertHumboldt-Universit at zu BerlinDie Dissertation wurde am 24.06.2008 bei der Technischen Universit atMunc hen eingereicht und durch die Fakult at fur Elektrotechnik undInformationstechnik am 11.11.2008 angenommen.AbstractThe scope of this thesis is the synthesis and electrical characterization ofSi to Ni silicide nanowire heterostructures with the focus on investigatingtheir electronic transport properties and conceiving a novel type of tran-sistor with added functionality. Nominally intrinsic Si nanowires (SiNW)were grown by chemical vapor deposition employing the vapor-liquid-solidmechanism. Growth was optimized to provide a controllable and uniformSiNW diameter distribution with mean values down to 7 nm. As a rst steptowards vertical monolithic integration, SiNWs were grown on amorphousmetallic layers and guided vertically through high aspect ratio trenches.