Silicon based microcavity enhanced light emitting diodes [Elektronische Ressource] / von Jaroslava Potfajova

Silicon based microcavity enhancedlight emitting diodesDissertationvorgelegt derFakult at Mathematik und NaturwissenschaftenTechnische Universit at DresdenvonIng. Jaroslava Potfajovageboren am 26. M arz 1980 in Trencin, SlowakeiEingereicht am 30. Juli 2009Verteidigt am 7. Dezember 20091. Gutachter: Prof. Dr. Manfred Helm2. Gutachter: Prof. Dr. Thomas DekorsyIt is better to light a candle, than to curse the darkness.KonfuziusAbstractRealising Si-based electrically driven light emitters in a process technology compati-ble with mainstream microelectronics CMOS technology is key requirement for the im-plementation of low-cost Si-based optoelectronics and thus one of the big challenges ofsemiconductor technology. This work has focused on the development of microcavityenhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimentalas well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Sidiode was used, which was fabricated by ion implantation of boron into n-type silicon.Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138nm with a reasonably high power e ciency of 0.1% [1].