SiGe HBT ICs with high operational to transit frequency ratio: design and design re-use [Elektronische Ressource] / Sébastien Chartier

SiGe HBT ICs with High Operational toTransit Frequency Ratio:Design and Design Re-useDISSERTATIONzur Erlangung des akademischen Grades einesDOKTOR-INGENIEURS(DR.-ING.)der Fakult¨at fu¨r Ingenieurwissenschaftenund Informatik der Universit¨at UlmvonS´ebastien Chartieraus AuchelGutachter: Prof. Dr.-Ing. Hermann SchumacherDr. Christoph ScheyttAmtierender Dekan: Prof. Dr.-Ing. Michael Weber30.01.2009AbstractTherecentsignificantperformanceimprovementofSiGeHeterojunctionBipolarTransis-tors has opened the way to the millimeter-wave domain. In the future, this will allowthe development of new exciting consumer-oriented applications such as high-data-ratewireless systems or high resolution automotive radar.However,withtheaggressivescalingofdevicedimensionsandtheimplementationofnewadvanced features, the cost of Si-based technologies becomes a major issue. The possiblesolutionsare,first,touseandcombineefficientdesigntechniquestoreachhigherfrequen-cies for a given technology with relaxed lateral scaling. A second approach consists inusing a circuit, once the design has been successful, as a foundation for future designs,thus drastically reducing the required time for a design cycle and its cost.These two approaches have been investigated in this work.