Etude de caractérisation de matériaux diélectriques de grille à forte permittivité pour les technologies

FOLIO ADMINISTRATIF THESE SOUTENUE DEVANT L'INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON NOM : CHANG DATE de SOUTENANCE : 21 juillet 2003 (avec précision du nom de jeune fille, le cas échéant) Prénoms : Youjean TITRE : Etude de caractérisation de matériaux diélectriques de grille à forte permittivité pour les technologies CMOS ultimes NATURE : Doctorat Numéro d'ordre : 03 ISAL Formation doctorale : Dispositifs de l’Electronique Intégrée Cote B.I.U. - Lyon : T 50/210/19 / et bis CLASSE : RESUME : This thesis presented the study of new gate dielectric materials with high permittivity ("high-k") for their integration into gate insulator of ultimate CMOS technology. Indeed, the aggressive miniaturization of the devices micro-electronics comes up today against the limits of SiO and will impose in 2the term of 2 or 3 years, its replacement by an insulator with higher permittivity, which constitutes a true technological rupture. Among the materials the most promising candidates, Al O ("modeste–k"), HfO 2 3 2("high-k") and SrTiO ("very high-k") represent potential solutions with respectively short, medium and 3long term. The principal problem of this integration is to reach equivalent oxide thickness (EOT) lower than 1 nm while maintaining leakage currents acceptable for the applications considered. The blocking points are in the technological compatibility of these materials, their thermodynamic stability, the control of the ...