Scattering processes in quantum dot devices with the example of an amplifier [Elektronische Ressource] / presented by Sabine Dommers

Scattering processesinquantum dot deviceswiththe example of an ampli erDissertationpresented bySabine Dommersto the Institute of Physics ofDortmund, September 2009ContentsList of publications iiiMotivation 11 Introduction to experimental and theoretical fundamentals 31.1 Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.1.1 Crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41.1.2 Band model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51.1.3 Excitons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81.2 Quantum dots . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91.2.1 Creation of quantum dots . . . . . . . . . . . . . . . . . . . . . . 101.3 Quantum dot ampli ers . . . . . . . . . . . . . . . . . . . . . . . . . . . 121.4 Experiment and sample characteristics . . . . . . . . . . . . . . . . . . . 141.4.1 Experimental setup . . . . . . . . . . . . . . . . . . . . . . . . . . 141.4.2 Measurement methods . . . . . . . . . . . . . . . . . . . . . . . . 181.4.3 Sample characteristics . . . . . . . . . . . . . . . . . . . . . . . . 201.5 Theoretical description of gain dynamics and Coulomb scattering processes 252 Concepts and realization of GHz optical pulse-train generation 312.1 Theoretical concepts related with pulse shaping . . . . . . . . . . . . . . 312.1.1 Fourier transformation . . . . . . . . . . . . . . . . . . . . . . . . 312.1.