Rapid thermal processing of silicon solar cells [Elektronische Ressource] : passivation and diffusion / vorgelegt von Ji Youn Lee

Rapid Thermal Processing of Silicon Solar Cells -Passivation and DiffusionINAUGURAL-DISSERTATIONzurErlangung des DoktorgradesderFakultät für Mathematik und PhysikderAlbert-Ludwigs-Universität Freiburg i. Brsg.vorgelegt vonJi Youn Leeaus Wonju, Süd-Korea2003FraunhoferInstitut für Solare Energiesysteme (ISE)Freiburg i. Brsg.Dekan: Prof. Dr. Rolf SchneiderLeiter der Arbeit: Prof. Dr. Wolfram WettlingReferent: PettlingKorreferent: Prof. Dr. Matthias WeidemüllerTag der Verkündung des Prüfungsergebnisses: 10. Oktober 2003Tomy grandmother for faithmy parents for setting me on the path toward my dream and encouragementmy elder sister for her love, patience and sacrificemy other sister and brothers for their love and supportContents1 Introduction 12 Device physics of silicon solar cells 32.1 The p-n junction model 32.1.1 Basic equations 32.1.2 The p-n junction at equilibrium 42.1.3 The p-n junction at non-equilibrium 62.1.4 The p-n junction under illumination 82.2 Solar cell characteristics 92.2.1 Solar cell parameters 92.2.2 Illuminated current-voltage (I-V) characteristics 102.2.3 Dark current-voltage (I-V) characteristics 113 Recombination mechanisms 133.1 General theory 133.2 Radiative recombination 133.3 Auger recombination 153.3.1 Traditional Auger recombination 153.3.2 Coulombic enhanced Auger recombination 153.4 Shockley-Read-Hall recombination 173.4.1 Shockley-Read-Hall recombination in bulk 173.4.