Radical source molecular beam epitaxy of ZnO based heterostructures [Elektronische Ressource] / von Sergey Sadofiev

Radical-source molecular beam epitaxy of ZnO-basedheterostructuresDISSERTATIONzur Erlangung des akademischen Gradesdoctor rerum naturalium (Dr. rer. nat.)im Fach Physikeingereicht an derMathematisch-Naturwissenschaftlichen Fakultät IHumboldt-Universität zu BerlinvonHerr Physikingenieur Sergey Sadofiev31.03.1977, Rjasan, UdSSRPräsident der Humboldt-Universität zu Berlin:Prof. Dr. Christoph MarkschiesDekan der Mathematisch-Naturwissenschaftlichen Fakultät I:Prof. Dr. Lutz-Helmut SchönGutachter:1. Prof. Dr. Fritz Henneberger2. Prof. Dr. W. Ted Masselink3. Prof. Dr. Andreas Waageingereicht am: 15.06.2009Tag der mündlichen Prüfung: 27.10.2009AbstractThis work focuses on the development of the novel growth approaches for thefabrication of Group II-oxide materials in the form of epitaxial films and hetero-structures. It is shown that molecular-beam epitaxial growth far from thermalequilibrium allows one to overcome the standard solubility limit and to alloy ZnOwith MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %.In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layer-by-layer growth mode controlled by oscillations in reflection high-energy electrondiffraction makes it possible to fabricate atomically smooth heterointerfaces andwell-defined quantum well structures exhibiting prominent band-gap related lightemission in the whole composition range.