Pseudomorphic and metamorphic HEMT-technologies for industrial W-band low-noise and power applications [Elektronische Ressource] / von Jan Erik Grünenpütt

Pseudomorphic and metamorphicHEMT technologies for industrial W bandlow noise and power applicationsDISSERTATIONzur Erlangung des akademischen Grades einesDOKTOR INGENIEURS(DR. ING.)der Fakultät für Ingenieurwissenschaftenund Informatik der Universität UlmvonJAN ERIK GRÜNENPÜTTAUS HEIDENHEIM A.D. BRENZGutachter: Prof. Dr. Ing. Erhard KohnProf. Dr. Christophe GaquièreAmtierender Dekan: Prof. Dr. Ing. Michael WeberUlm, 14. Dezember 2009This work has been prepared from January 2001 to March 2009 at UnitedMonolithic Semiconductors GmbH, and the University of Ulm, departmentof electron devices and circuits.Parts of this work have already been published:J. Grünenpütt, C. Gässler, D. Geiger, R. Deufel, C. Woelk, E. Kohn, "Se lective double recess technology on metamorphic HEMTs improving the on state breakdown behavior", Technical Digest CS MAX, San Jose, CA, Nov2002A. Bessemoulin, C. Gaessler, J. Gruenenpuett, B. Reig, "Hot via interconnects:A Step towards Surface Mount Chipscale Packaged MMICs up to 110GHz",thTechnical Digest: 26 IEEE CSIC Symposium, Monterey, Oct. 2004J. Gruenenpuett, C. Gaessler, C. Gaquière, E. Kohn, "800mW/mm powerdensity @ 94GHz for a 70nm pHEMT technology", Technical digest CS MAX04, Monterey, Oct. 2004A. Bessemoulin, J. Gruenenpuett, P. Fellon, A. Tessmann, E. Kohn, "Copla nar W Band Low Noise Amplifier MMIC Using 100 nm Gate length GaAsthPHEMTs",12 GaAs Symposium - Amsterdam, Oct. 2004A. Bessemoulin, P. Fellon, J.