Physical modelling of advanced SiGe transistors [Elektronische Ressource] / by Vytla, Rajeev Krishna

Physical Modelling of Advanced SiGeTransistorsVytla Rajeev KrishnaUniversity of Bremen 2009Physical Modelling of Advanced SiGeTransistorsFrom the Faculty of Physics/Electrical Engineeringat the University of Bremen, Germanyfor the obtainment of the degree ofDoktor-Ingenieur (Dr.-Ing.)approved thesisbyMSc. Vytla Rajeev Krishnafrom Angara, IndiaSupervisor: Prof. Dr. phil. nat. D. SilberCo-Supervisor: Prof. Dr. M. SchneiderthDate of the oral presentation: October 13 , 2009thSubmitted on: September 7 , 2009"The power of God is with you at all times; through the activities of mind,senses, breathing, and emotions; and is constantly doing all the work usingyou as a mere instrument."— Bhagavad GitaAcknowledgementsThis dissertation would not have been completed without the help of many individuals.Firstly, I would like to thank my supervisor Prof. D. Silber at the University of Bremenfor supervising the thesis. I would like to thank Prof. M. Schneider for agreeing to be mysecond supervisor at the university. At Infineon, I would dedicate special thanks to mypresent supervisor Dr. Klaus Aufinger and Dr. Thomas Meister. This thesis would nothave been possible to complete without their support. Their influence on this work andon me as a person cannot be emphasized enough. Thanks for all the valuable commentsthey gave me, which helped me a lot in conducting my research, and thanks for all theirpatience as they reviewed and corrected my dissertation.