Passivation of the p-n junction edge in high-power semiconductor silicon devices ; Didelės galios puslaidininkinių silicio prietaisų p-n sandūros krašto pasyvacija

VILNIUS UNIVERSITY SEMICONDUCTOR PHYSICS INSTITUTE Dainius Šalucha PASSIVATION OF THE p-n JUNCTION EDGE IN HIGH-POWER SEMICONDUCTOR SILICON DEVICES Summary of Doctoral Dissertation Technological Sciences, Material Engineering (08T) Vilnius, 2009 The investigations have been carried out at Vilnius University and Semiconductor Physics Institute in 2004 to 2009. Scientific Supervisor: Dr. Sci. Irena Šimkien ė (Semiconductor Physics Institute, Technological Sciences, Material Engineering - 08T) Defence of Dissertation will be held at Council of Materials Engineering Science trend: Chairman Prof. Dr. Sci. Steponas Ašmontas (Institute of Semiconductor Physics, Technological Sciences, Material Engineering - 08T) Members Prof. Dr. Sci. Antanas Feliksas Orliukas (Vilnius University, Technological Sciences, Material Engineering - 08T) Prof. Dr. Sci. Sigitas Tamulevi čius (Kaunas University of Technology, Technological Sciences, Material Engineering - 08T) Assoc. Prof. Dr. Bonifacas Vengalis (Institute of Semiconductor Physics, Technological Sciences, Material Engineering - 08T) Prof. Dr. Sci. Rimas Vaišnoras (Vilnius Pedagogical University, Physics Science, Physics – 02P) Opponents: Prof. Dr. Sci. Albertas Laurinavi čius (Semiconductor Physics Institute, Technological Sciences, Material Engineering - 08T) Prof. Dr. Sci.