Opto-electronic characterization of polycrystalline CuInS2 and Cu(In,Ga)S2 absorber layers by photoluminescence [Elektronische Ressource] / Florian Heidemann. Betreuer: Gottfried Heinrich Bauer

Opto-electronic characterization ofpolycrystalline CuInS and Cu(In,Ga)S2 2absorber layers by photoluminescenceVon der Fakultät für Mathematik und Naturwissenschaften derCarl von Ossietzky Universität Oldenburgzur Erlangung des Grades und Titels einesDoktors der Naturwissenschaften(Dr. rer. nat.)angenommene DissertationvonFlorian Heidemanngeboren am 25.09.1979 in DinklageOldenburg, 29. September 2011Gutachter:Betreuender Gutachter: Prof. Dr. Gottfried H. Bauer (Universität Oldenburg)Zweite Gutachterin: Prof. Dr. Susanne Siebentritt (Universität Luxemburg)Tag der Disputation: 13.12.2010AbstractPhotoluminescence (PL) is an established method to characterize the opto-electronic properties of solar cell absorber layers. With the help of Planck’s gen-eralized law it is in principle possible to determine the quasi-Fermi level splitting— which is the upper limit of the open circuit voltage V — and the absorptionoccoefficient of a solar cell before its actual completion. For large-scale measurements(mm/cm regime) this is valid for absorber layers with lateral homogeneous proper-ties, however it is not directly transferable to polycrystalline semiconductors due tolaterally fluctuating opto-electronic and structural parameters.The lateral fluctuations in opto-electronic properties of polycrystallineCu(In Ga )S have been analyzed (e.g.