Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction [Elektronische Ressource] / Roman Shayduk. Gutachter: Klaus H. Ploog ; Ted Masselink ; Andreas Wieck

Molecular beam epitaxy of GeTe-Sb Te phase change2 3materials studied by X-ray diffractionDISSERTATIONzur Erlangung des akademischen Gradesdoctor rerum naturalium(Dr. rer. nat.)im Fach Physikeingereicht an derMathematisch-Naturwissenschaftlichen Fakultät IHumboldt-Universität zu BerlinvonHerr M. Sc. Roman ShaydukPräsident der Humboldt-Universität zu Berlin:Prof. Dr. Dr. h.c. Christoph MarkschiesDekan der Mathematisch-Naturwissenschaftlichen Fakultät I:Prof. Dr. Lutz-Helmut SchönGutachter:1. Prof. Dr. Klaus H. Ploog2. Prof. Dr. Ted Masselink3. Prof. Dr. Andreas Wieckeingereicht am: 26 Oktober 2009Tag der mündlichen Prüfung: 20 Mai 2010Here I express my deepest gratitude to my wife Elena for all the asperities andproblems she had to overcome during my work (e.g. my absence during night shifts,conferences and others). She was always delivering me her love and care I needed somuch and through the whole work. This work would not be finished without her and Idedicate this work to her.AbstractThe integration of phase change materials into semiconductor heterostructuresmay lead to the development of a new generation of high density non-volatile phasechange memories. Epitaxial phase change materials allow to study the detailedstructural changes during the transition and to determine the scaling limitsof the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phasechange alloys on GaSb(001).