Modelling and fabrication of high performance Schottky barrier SOI-MOSFETs with low effective Schottky barriers [Elektronische Ressource] / Forschungszentrum Jülich in der Helmholtz-Gemeinschaft, Institute of Bio- and Nanosystems. Min Zhang

Forschungszentrum Jülichin der Helmholtz-GemeinschaftInstitute of Bio- and NanosystemsModelling and fabrication of high performanceSchottky-barrier SOI-MOSFETs with loweffective Schottky-barriersMin ZhangJül-4235Dezember 2006ISSN 0944-2952Jül-4235 Min Zhang Label-free dectection of biomoleculesJül-4235Berichte des Forschungszentrums Jülich 4235Modelling and fabrication of high performanceSchottky-barrier SOI-MOSFETs with loweffective Schottky-barriersMin ZhangBerichte des Forschungszentrums Jülich ; 4235ISSN 0944-2952Institute of Bio- and NanosystemsD 82 (Diss., RWTH Aachen, 2006)Zu beziehen durch: Forschungszentrum Jülich GmbH, • Zentralbibliothek, VerlagD-52425 Jülich • Bundesrepublik Deutschlandin 02461/61-5220 • Telefax: 02461/61-6103 • e-mail: zb-publikation@fz-juelich.deContents1 Introduction 12 Principles of SB-MOSFETs 42.1 The SB-MOSFET 42.2 The MOS-capacitor 62.3 Schottky diodes 92.4 Schottky diode current 112.5 Operating principles of SB-MOSFETs 132.6 I-V characteristics of SB-MOSFET devices 152.6.1 Long-channel SB-MOSFET 152.6.2 Short-channel SB-MOSFET 182.6.3 SB-MOSFESTs on bulk versus on SOI 203 Silicide in SB-MOSFET 223.1 Silicidation of NiSi 233.1.1 NiSi films on Si(100) 253.1.2 NiSi films on SOI(100) 263.2 Silicidation induced dopant segregation 283.