Metal-semiconductor transition materials [Elektronische Ressource] : FeS and VO_1tn2 thin films by RF reactive sputtering / von Ganhua Fu

Metal-Semiconductor Transition Materials: FeS and VO Thin Films by RF Reactive Sputtering 2 Dissertation zur Erlangung des Doktorgrades der Naturwissenschaften von Ganhua Fu Betreuer: Prof. Dr. B. K. Meyer I. Physikalisches Institut Justus-Liebig-Universität Gießen Gießen, June 2007 Contents 1 Introduction...………………………….………………………………………………1 2 Preparation and characterization techniques……………………………..………...….4 2.1 Radio frequency reactive sputtering. ……………………..……………………...4 2.2 Characterization techniques..…………………………………………………...6 2.2.1 X-ray diffraction and reflectivity ……………..…………………………..6 2.2.2 Scanning electron microscopy …………………...……………………….9 2.2.3 Energy-dispersive X-ray spectroscopy ……………………….................10 2.2.4 Secondary ion mass spectrometry …………………………………….....12 2.2.5 Rutherford Backscattering Spectroscopy ………..………………………13 2.2.6 Elastic recoil detection analysis ………………………………................16 2.2.7 Optical transmittance...………………………………….….……………17 2.2.8 Electrical resistivity………………………………..………………….…17 3 FeS material: a brief introduction ……………………………...……………………..19 3.1 Crystal structure ………………..……………………........................................19 3.2 Electrical and magnetic properties….…………………………………………..21 4 Deposition, characterization and electrical properties of FeS thin films ……………22 4.1 Structure and morphology of FeS films……………………...