Memristive tunnel junctions [Elektronische Ressource] / Patryk Krzysteczko

PATRYK KRZYSTECZKOMEMRISTIVETUNNEL JUNCTIONSBIELEFELD UNIVERSITYMemristive Tunnel JunctionsThesis by Patryk KrzysteczkoCopyright © 2010 Patryk Krzysteczkobielefeld universitydepartment of physicsThesis to obtain the academic degree of doctor rerum naturaliumReferees:PD Andy ThomasProf. Jürgen SchnackDeclaration:I hereby declare that the work in this thesis is my own original work, except where indicatedin the text.The chapter The Memristor is based on the paper: P. Krzysteczko, G. Reiss, and A. Thomas,‘Memristive switching of MgO based magnetic tunnel junctions,’ Appl. Phys. Lett. 95, 112508(2009)In the chapter Resistive switching the section Positive stress is based on the paper: P. Krzysteczko,X. Kou, K. Rott, A. Thomas, and G. Reiss, ‘Current induced resistance change of magnetictunnel junctions with ultra-thin MgO tunnel barriers,’ J. Magn. Magn. Mater. 321, 144 (2009)August 2010AcknowledgmentsI would like to express my gratitude to my supervisors PD AndyThomas and Prof. Günter Reiss for giving me the opportu-nity to work in their research groups and their excellent advicethroughout this study. Particularly, I would like to thank PDAndy Thomas who encouraged me on the way to this ‘exotic’topic.My sincere thanks to Dr. Karsten Rott who was the first toobserve ‘anomalies’ that led to the discovery of memristive mag-netic tunnel junctions, and to Dr. Xinli Kou for her support atthe early stage of this project.