MBE growth and characterization of multilayer structures for vertically emitting laser devices [Elektronische Ressource] / by Fernando Rinaldi

MBE Growth and Characterization of MultilayerStructures for Vertically Emitting Laser DevicesDISSERTATIONto obtain the academic degree ofDOKTOR-INGENIEUR(DR.-ING.)from the Faculty of Engineering Science and Computer SciencesUlm UniversitybyFernando Rinaldifrom Catanzaro, ItalyReferees: Prof. Dr. rer. nat. Peter UngerProf. Carl E. Krill III, Ph.D.Dean of the faculty: Prof. Dr. rer. nat. Helmuth PartschOral examination: Ulm, April 23rd, 2008To Antje, the woman I love.AbstractThis work concerns molecular beam epitaxy (MBE) growth and characterization ofmultilayer structures for vertically emitting laser devices. In particular, this thesis isfocused on the fabrication of novel VCSEL (vertical-cavity surface-emitting laser) andVECSEL (vertical-external-cavity surface-emitting laser) multilayer structures grown onGaAs substrate.Several VCSEL structures for emitting wavelengths of 760, 850, and 980nm wererealized and the corresponding devices show high performance and have direct techno-logical applications. As example, single-mode 760nm VCSELs are successfully employedin oxygen sensing, or integrated VCSELs-photodetector systems allow bidirectional datatransmission in full-duplex mode at 2.5Gbit/s over 50m graded-index multimode fiber.AsfarasregardVECSELs, samples fordevices having emitting wavelengths of850nmand 980nm were produced. High-performance 850nm quantum-well-pumped VECSELshaving a slope efficiency of 67% were demonstrated.