Interface characterization of metal-gate MOS-structures and the application to DRAM-capacitors [Elektronische Ressource] / von Bernhard Sell

Interface Characterizationof Metal-Gate MOS-Structuresand the Application to DRAM-CapacitorsVom Promotionsausschuss derTechnischen Universit at Hamburg-Harburgzur Erlangung des akademischen GradesDoktor-Ingenieurgenehmigte DissertationvonBernhard Sellaus Hamburg2002Erster Gutachter: Prof. Dr. Wolfgang KrautschneiderZweiter Gutachter: Prof. Dr. Wolfgang AlbrechtTag der mundlic? hen Prufung:? 17.06.2002ContentsList of Symbols iii1 Introduction 11.1 Dynamic Random Access Memory . . . . . . . . . . . . . . . . . . . . . . . 11.2 MOS Field-Effect Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.3 Advanced Electrode Materials . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Characterization Methods 72.1 CV-Measurements on MIS-Structures . . . . . . . . . . . . . . . . . . . . . 72.1.1 Dynamic CV-Measurements . . . . . . . . . . . . . . . . . . . . . . . 72.1.2 Extraction of Physical Parameters from CV-Curves. . . . . . . . . . 132.1.3 Parasitic Components during CV-Measurements . . . . . . . . . . . 142.2 IV-Measurements on MIS-Structures . . . . . . . . . . . . . . . . . . . . . . 152.2.1 Carrier Transport through Dielectrics . . . . . . . . . . . . . . . . . 152.2.2 Measuring IV-Characteristics . . . . . . . . . . . . . . . . . . . . . . 172.3 Charge Pumping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182.3.1 Classical Charge Pumping . . . . . . . . . . . . . . . . . . . . . . . . 202.3.