Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys [Elektronische Ressource] / vorgelegt von Jörg Teubert

Interaction between extended and localizedelectronic states in the region of the metal toinsulator transition in semiconductor alloysDISSERTATIONzur Erlangung des Doktorgradesder Naturwissenschaften(Dr. rer. nat.)vorgelegt vonJörg TeubertI. Physikalisches InstitutJustus-Liebig-Universität Gießen– anno 2008 –To My FamilyContents1 Introduction 72 Experimental methods 92.1 Magnetotransport measurements . . . . . . . . . . . . . . . . . . 92.2 Thermopower — measurement of the Seebeck effect . . . . . . . . 102.3 Modulation spectroscopy . . . . . . . . . . . . . . . . . . . . . . . 152.4 Raman spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . 182.5 Measurements under hydrostatic pressure . . . . . . . . . . . . . 193 Some fundamentals of electronic properties of doped semiconductors 233.1 Shallow impurities in semiconductors . . . . . . . . . . . . . . . . 233.2 The metal-insulator transition . . . . . . . . . . . . . . . . . . . . 263.3 Mechanisms of transport at low temperatures . . . . . . . . . . . 293.4 Isovalent impurities . . . . . . . . . . . . . . . . . . . . . . . . . . 344 Influence of localized isovalent impurity states on the conductionband structure of (Ga,In)As 374.1 Isovalent impurity nitrogen in GaAs . . . . . . . . . . . . . . . . 374.2 Isovalenty boron in GaAs . . . . . . . . . . . . . . . . . . 404.3 Influenceoflocalizedisovalentcentersonthemetal-insulatortran-sition . . . . . . . . . . . . . . . . . . . . . . . . . .