Influence of material, surface reconstruction and strain on submonolayer growth at Si(111) and Ge(111) surfaces [Elektronische Ressource] / vorgelegt von Vasily Cherepanov

"Influence of material, surface reconstruction and strain on submonolayer growth at Si(111) and Ge(111) surfaces" Von der Fakultät für Mathematik, Informatik und Naturwissenschaften der Rheinisch-Westfälischen Technischen Hochschule Aachen zur Erlangung des akademischen Grades eines Doktors der Naturwissenschaften genehmigte Dissertation vorgelegt von M.Sc. (Rus) Vasily Cherepanov aus Omsk, Russische Föderation Berichter: Priv. Doz. Dr. B. Voigtländer Universitätsprofessor Dr. H. Ibach Tag der mündlichen Prüfung: 23. Juli 2004 Diese Dissertation ist auf den Internetseiten der Hochschulbibliothek online verfügbar ABSTRACT The present work is dedicated to the experimental investigation of the factors that may influence the initial stage of the epitaxial growth on the Ge(111) and Si(111) surfaces. In particular the influence of strain, surface reconstruction, and material on the surface diffusion, nucleation, and growth of two-dimensional islands was explored. A set of the template surfaces, which are different only in one particular feature (reconstruction, strain, material) was prepared to study the dependence of the growth on these properties. The scanning tunnelling microscopy measurements of the density of 2D islands and the density of small clusters after submonolayer deposition as the functions of temperature were used to study the nucleation and growth on Ge(111) and Si(111) template surfaces.