In-situ Atomic Layer Deposition growth of Hf-oxide [Elektronische Ressource] / Konstantin Karavaev. Betreuer: Dieter Schmeißer

In-situ Atomic Layer Deposition growth of Hf-oxide Von der Fakultät für Mathematik, Naturwissenschaften und Informatik der Brandenburgischen Technischen Universität Cottbus zur Erlangung des akademischen Grades Doktor der Naturwissenschaften (Dr. rer. nat.) genehmigte Dissertation vorgelegt von Diplom-Physiker Konstantin Karavaev geboren am 03.02.1982 in Kemerovo, Russland Gutachter: Prof. Dr. rer. nat. habil. Dieter Schmeier Gutachter: Prof. Dr. rer. nat. habil. Ehrenfried Zschech Gutachter: Prof. Dr. rer. nat. habil. Christian Pettenkofer Tag der mundlichen Prufung: 17 Juni 2010 Tag der mundlichen Prufung: 20 Juni 2010 To my parents and my girlfriend AnnabelAcknowledgementsThis thesis is based on the experimental work carried out in the Chair Applied Physicsand Sensors, Brandenburg University of Technology Cottbus and BESSY, during theyears 2006-2009.I wish to express my deep gratitude to my supervisor Professor Dieter Schmeisserfor his support, encouragement and advice during this work. I would like to thankmy coauthors Dr. Massimo Tallarida for sharing his experience and immeasurablehelp throughout the course of this work. For technical help and assistance, I wish toacknowledge Mr. Guido Beuckert and Mrs. Ioanna Paloumpa. The whole personnelin the Chair Applied Physics and Sensors, Brandenburg University of TechnologyCottbus.