High-speed InP heterojunction bipolar transistors and integrated circuits in transferred substrate technology [Elektronische Ressource] / vorgelegt von Tomas Kraemer

High-Speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology vorgelegt von Diplom - Physiker Tomas Krämer aus Stuttgart Von der Fakultät IV - Elektrotechnik und Informatik der Technischen Universität Berlin zur Erlangung des akademischen Grades Doktor der Naturwissenschaften – Dr. rer. nat. – genehmigte Dissertation Promotionsausschuss: Vorsitzender: Prof. Dr.-Ing. Heino Henke Berichter: Prof. Dr. rer. nat. Günther Tränkle Berichter: Prof. Dr.-Ing. Dr.-Ing. E.h. Herbert Reichl Tag der wissenschaftlichen Aussprache: 03.05.2010 Berlin 2010 D 83 Acknowledgement For my work I am indebted to many people. I want to thank Prof. Günther Tränkle. He lead me to this exciting field of research, gave me guidance in regular meetings and dedicated substantial resources of the Ferdinand Braun Institute to the project. Dr. Hans-Joachim Würfl backed the work by his continuous conceptual and personal support. He had confidence in my action and was always willing to share his profound technological knowledge. I would like to thank Dr. Chafik Meliani, Dr. Franz-Josef Schmückle, Dr. Matthias Rudolph and Dr. Friedrich Lenk for the team-work in circuit design, simulation, device modeling and layout, respectively. Dr. Richard Lossy, Kim Seon-Ohk, Dr. Peter Wolter introduced me to process technology. Dr. Andre Maaßdorf, Dr. Amy Liu and Dr. Frank Brunner provided the epitaxy. Dr.