High precision stress measurements in semiconductor structures by Raman microscopy [Elektronische Ressource] / presented by Benjamin Uhlig

High Precision Stress Measurementsin Semiconductor Structuresby Raman MicroscopyA dissertation of theTU Dresden, Germanyfor the degree ofDoctor of Natural Sciences(Dr. rer. nat.)presented byBENJAMIN UHLIGAccepted on the recommendation of:Prof. L. M. Eng, TU DresdenProf. A. Michaelis, IKTS Fraunhofer Dresden2009cAbstractStress in silicon structures plays an essential role in modern semiconductor tech-nology. This stress has to be measured and due to the ongoing miniaturizationin today’s semiconductor industry, the measuring method has to meet certainrequirements.The present thesis deals with the question how Raman spectroscopy can be usedto measure the state of stress in semiconductor structures. In the first chapter therelation between Raman peakshift and stress in the material is explained. It isshown that detailed stress maps with a spatial resolution close to the diffractionlimit can be obtained in structured semiconductor samples. Furthermore a novelprocedure, the so called Stokes-AntiStokes-Difference method is introduced. Withthis method, topography, tool or drift effects can be distinguished from stressrelated influences in the sample.In the next chapter Tip-enhanced Raman Scattering (TERS) and its application foran improvement in lateral resolution is discussed. For this, a study is presented,which shows the influence of metal particles on the intensity and localization ofthe Raman signal.