Growth and investigation of AlN/GaN and (Al,In)N/GaN based Bragg reflectors [Elektronische Ressource] / von Tommy Ive

GrowthandinvestigationofAlN/GaNand(Al,In)N/GaNbasedBraggreflectorsDISSERTATIONzurErlangungdesakademischenGradesdoctorrerumnaturalium(Dr. rer. nat.)imFachPhysikeingereichtanderMathematisch NaturwissenschaftlichenFakultätIHumboldt UniversitätzuBerlinvonHerrM.Sc.TommyIvegeborenam11.03.1968inVäxjö,SchwedenPräsidentderHumboldt UniversitätzuBerlin:Prof.Dr.HansJürgenPrömel(inVertretung)DekanderMathematisch NaturwissenschaftlichenFakultätI:Prof.ThomasBuckhout,PhDGutachter:1. Prof.Dr.KlausH.Ploog2. Prof.Dr.EnriqueCalleja3. Prof.Dr.W.TedMasselinkeingereichtam: 8.September2005TagdermündlichenPrüfung: 16.Dezember2005AbstractIn this work we investigate the synthesis of Bragg reflectors consisting either of AlN/GaN or of(Al,In)N/GaN by plasma assisted molecular beam epitaxy (MBE). In addition, we study the impact ofSi doping on the surface morphology and the structural and electrical properties of AlN/GaN BraggreflectorsinorderinvestigatethefeasibilityofobtainingverticallyconductingBraggmirrors. Thestruc turesaregrownonconductingSiC(0001)substrates.A brief introduction to the fundamental concepts used for the growth of AlN and GaN is given.Metal stable growth at high temperature yield excellent results in terms of surface morphology andcrystalqualityandhavethereforebeenwidelyadopted.