Growth and characterization of silicon and germanium nanowhiskers [Elektronische Ressource] / von Andrea Kramer

Growth and characterization of silicon andgermanium nanowhiskersDISSERTATIONzur Erlangung des akademischen Gradesdoctor rerum naturalium(Dr. rer. nat.)im Fach Physikeingereicht an derMathematisch-Naturwissenschaftlichen Fakultät IHumboldt-Universität zu BerlinvonFrau Dipl.-Phys. Andrea Kramergeboren am 16.07.1978 in Singen (Hohentwiel)Präsident der Humboldt-Universität zu Berlin:Prof. Dr. Christoph MarkschiesDekan der Mathematisch-Naturwissenschaftlichen Fakultät I:Prof. Dr. Lutz-Helmut SchönGutachter:1. Prof. Dr. Roberto Fornari2. Prof. Dr. Dr. h.c. Hans Lüth3. Prof. Dr. W. Ted Masselinkeingereicht am: 03.09.2008Tag der mündlichen Prüfung: 19.02.2009AbstractThis dissertation deals with the growth and the characterization of siliconand germanium nanowhiskers, also called nanorods or nanowires.The investigation of these structures is of great interest as they representpromising building blocks for future electronic devices. With regard to apossible application, the knowledge of size, crystallographic orientation andposition of the nanowhiskers is essential.The purpose of this work was, therefore, to investigate the growth of Si andGe nanowhiskers with regard to their size, orientation and position.The nanowhiskers were grown via physical vapor deposition (PVD) in ultra-high vacuum using the vapor-liquid-solid (VLS) mechanism which is basedon growth from solution droplets.