Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells [Elektronische Ressource] / von Yue-Jun Sun

Growthandcharacterizationof M planeGaNand(In,Ga)N/GaNmultiplequantumwellsDISSERTATIONzurErlangungdesakademischenGradesdoctorrerumnaturalium(Dr. rer. nat.)imFachPhysikeingereichtanderMathematisch NaturwissenschaftlichenFakult at¨ IHumboldt Universit at¨ zuBerlinvonHerrnM.Eng. Yue JunSungeborenam27.07.1973inLeShan,VR.ChinaPrasident¨ derHumboldt Universit at¨ zuBerlin:Prof. Dr. Jur¨ genMlynekDekanderMathematisch NaturwissenschaftlichenFakult at¨ I:Prof. Dr. MichaelLinscheidGutachter:1. Prof. Dr. KlausH.Ploog2. Prof. Dr. W.TedMasselink3. Prof. Dr. RobertoFornarieingereichtam: 18.Dezember2003Tagdermundlichen¨ Prufung:¨ 24. Mai2004AbstractIn this thesis, we investigate the synthesis of wurtzite M plane (In,Ga)N(1 100) heterostructures on γ-LiAlO (100)byplasma assistedmolecularbeamepitaxy(MBE).Weexaminetheimpactofgrowthcon 2ditions on the structural, morphological, and optical doping properties of M plane GaN. Furthermore,wefabricate M plane(In,Ga)N/GaNmultiplequantumwellsandinvestigatetheirstructuralandopti calproperties. Finally,theincorporationofMgin M planeGaNisstudiedtoachievep typeconductiv ity.We start by giving an introduction concerning strain and electrostatic polarization fields. The moti vation of growth along the [1100] direction, instead of along the conventional [0001] direction is pre sented. The GaN(1100) plane is nonpolar since it is composed of equal numbers of three fold coor-dinated Ga and N atoms.