Growth and anisotropic transport properties of self assembled InAs nanostructures in InP [Elektronische Ressource] / von Oliver Bierwagen

Growth and anisotropic transport propertiesof self-assembled InAs nanostructures in InPDISSERTATIONzur Erlangung des akademischen Gradesdoctor rerum naturalium(Dr. rer. nat.)im Fach Physikeingereicht an derMathematisch-Naturwissenschaftlichen Fakultät Ider Humboldt-Universität zu BerlinvonDipl.-Phys. Oliver Bierwagengeboren am 30.12.1975 in BerlinPräsident der Humboldt-Universität zu Berlin:Prof. Dr. Christoph MarkschiesDekan der Mathematisch-Naturwissenschaftlichen Fakultät I:Prof. Dr. Christian LimbergGutachter:1. Prof. W. T. Masselink2. Prof. R. Fornari3. Prof. G. J. Salamoeingereicht am: 13.02.2007Tag der mündlichen Prüfung: 14.05.2007Abbreviations/Symbols0D, 1D, 2D, 3D zero-, one-, two-, three-dimensionalN in sample names : grown onnominally oriented (N) substrateO in sample names : grown on vicinal (A) substrate,2 off toward [110]P in sample names : grown on vicinal (B) substrate, 2 off toward [110]Q in sample names : grown on vicinal (C) substrate,2 off toward [100]B magnetic fielde electron chargeE energyE , E , E conduction (sub)band edge, valence (sub)band edgeC V FE Fermi energyFF electric fieldh,h Planck constant, h=2, reduced Planck constantj current densityk Boltzmann constantk Fermi wavevectorFl , l mean free path, dephasing lengthe Fermi wavelengthFm , m effective mass, mass of the free electroneML monolayer, equals half the lattice constant carrier mobilityn density (positive for electrons)!