Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM [Elektronische Ressource] / vorgelegt von Neelima Paul

Bi surfactant mediated growth for fabrication ofSi/Ge nanostructures and investigation of Si/Geintermixing by STMVon der Fakult at fur Mathematik, Informatik und Naturwissenschaftender Rheinisch-Westf alischen Technischen Hochschule Aachenzur Erlangung des akademischen Gradeseiner Doktorin der Naturwissenschaftengenehmigte Dissertationvorgelegt vonNeelima Paul, M.Sc.,aus Bombay, IndienBerichter: Priv. Doz. Dr. Bert Voigtl anderUniversit atsprofessor Dr. Markus MorgensternTag der mundlic hen Prufung: 26. Oktober 2007Diese Dissertation ist auf den Internetseiten der Hochschulbibliothek onlineverfugbar.AbstractHeteroepitaxial growth of Ge on Si is extremely interesting for at least two rea-sons: rst, it has great potential as a substrate for new, high frequency semicon-ductor devices, while remaining compatible with existing Group IV technology;and second, it is a prototypical system for studying strained Stranski-Krastanowgrowth.The technological drawback is that it turns out to be di cult to grow Ge onSi in a controlled layer-by-layer manner. After a few smooth layers have beengrown epitaxially, the growth then proceeds by the formation of islands. This isknown as the Stranski-Krastanov growth mode. It has been found, however, thatdeposition of a single monolayer of As, Sb or Bi onto the silicon surface beforegrowth of Ge begins, can overcome the problem.