Atomic scale engineering of HfO2–based dielectrics for future DRAM applications [Elektronische Ressource] / Piotr Dudek. Betreuer: Dieter Schmeisser

Atomic scale engineering of HfO –based 2dielectrics for future DRAM applications Von der Fakultät für Mathematik, Naturwissenschaften und Informatik der Brandenburgischen Technischen Universität Cottbus zur Erlagerung des akademischen Grades eines Doktors der Naturwissenschaften (Dr. rer. Nat.) genehmigte Dissertation vorgelegt von Diplom-Ingenieur Piotr Dudek geboren am 10.10.1983 in Bogatynia (Polen) Gutachter: Prof. Dr. rer. nat. habil. Dieter Schmeisser Gutachter: Prof. Dr. rer. nat. habil. Hans-Joachim Müssig Gutachter: Prof. Dr. rer. nat. habil. Ehrenfried Zschech Tag der mündlichen Prüfung: 14.02.2011 Abstract Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups.