Aligned ion implantation using scanning probes [Elektronische Ressource] / von Arun Persaud

Aligned Ion ImplantationusingScanning ProbesDissertationzur Erlangung des Doktorgradesder Naturwissenschaftenvorgelegt beim Fachbereich Physikder Johann Wolfgang Goethe - Universit¨atin Frankfurt am Mainvon Arun Persaudaus Frankfurt am MainFrankfurt am Main und Berkeley (Kalifornien)2006-12-12iiiiivom Fachbereich Physik der Johann Wolfgang Goethe - Universit¨atals Dissertation angenommen.Dekan: Prof. Dr. Wolf AßmusGutachter: Prof. Dr. Horst Schmidt-B¨ocking undProf. Dr. Reinhard D¨ornerDatum der Dissertation:ivAbstractA new technique for precision ion implantation has been developed. A scan-ningprobehasbeenequippedwithasmallapertureandincorporatedintoanionbeamline, sothationscanbeimplanted throughtheapertureintoasam-ple. Byusingascanningprobethetargetcanbeimagedinanon-destructiveway prior to implantation and the probe together with the aperture can beplaced at the desired location with nanometer precision.In this work first results ofa scanning probe integrated into an ion beam-line are presented. A placement resolution of about 120nm is reported.The final placement accuracy is determined by the size of the aperturehole and by the straggle of the implanted ion inside the target material. Thelimits of this technology are expected to be set by the latter, which is of theorder of 10nm for low energy ions.This research has been carried out in the context of a larger programconcerned with the development of quantum computer test structures.