3-D time-depending simulation of void formation in metallization structures [Elektronische Ressource] / von David Dalleau

3-D Time-depending Simulation of Void formation in Metallization StructuresVom Fachbereich Elektrotechnik und Informationstechnikder Universität Hannoverzur Erlangung des akademischen GradesDoktor-IngenieurGenehmigte Dissertationvon DEA-DESS David Dalleaugeboren am 28 August 1974 in Saint-Denis, Réunion.20031.Referent: Prof. Dr.-Ing. J. Graul2. Referent: Prof. Dr.-Ing. H. GrabinskiGutachter: Prof. Y. DantoVorsitz: Prof. Dr.-Ing. E. BarkeTag der Promotion: 02. April 2003Abstract (keywords: Void, Simulation, Reliability)David, Dalleau3-D Time-depending Simulation of Void Formation in Metallization Structures.The reliability of integrated circuits has been of particular interest for the microelectronicindustry during the last decades. Today integrated circuits need to have a high quality andshould be more reliable due to consumers requirements as well as to their working conditions.In parallel, these requirements lead to the strong integration of microelectronic componentsfollowed by an increase in the power per unit area. In this situation, strong current densities,high temperatures and temperature gradients as well as induced thermomechanical stress areable to occur and can lead to the complete destruction of the integrated circuits functions.