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▲▲▲▲▲▲▲▲▲▲▲▲▲® BENCHMARK 800-III ICPETCH and DEPOSITIONTHE AFFORDABLE HIGH-PERFORMANCE DRIE AND LOW TEMPERATURE PECVDPLASMA PROCESSING SYSTEMS®The BenchMark 800-III Inductively CoupledPlasma (ICP) Processing System from AXIC, Inc.defines a new concept in Deep Reactive Ion Etch(DRIE) and low temperature-low damage PlasmaEnhanced Chemical Vapor Deposition (ICPPECVD) plasma processing. The system is basedon a modular design starting with a universal cham-ber and cabinet unit with ICP etch and depositionbottom electrodes available for easy installation intothe chamber unit. We are confident you will findthe ease of use, variety of plasma processes, service-ability and attractive pricing of the BENCHMARK®800-III unsurpassed by any other plasma prod-uct in the market.SYSTEM DESCRIPTIONIn the research and development of plasma pro-cessing, there has always been a great need for ahighly versatile and reliable tool. With the ever-changing requirements in plasma research, the sys-tem selected must offer the widest range of processparameters and a high degree of repeatability forprocess verification. It also must be easily modi-fied for new process requirements. We believe that®our BENCHMARK 800-III ICP etch/deposition plasma system satisfies these very demanding requirements.®The BENCHMARK 800-III ICP tool is a plasma tool that can be used in research, process development orlow volume production for precise etching and deposition on ...
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