SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE NOVEMBER FEATURES Extremely low equivalent on resistance RCE sat Amps continuous current Up to Amps peak current Very low saturation voltage Excellent hFE characteristics specified upto Amps

Niveau: Secondaire, Lycée, Terminale
SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - NOVEMBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) * 6 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFE characteristics specified upto 20 Amps PARTMARKING DETAILS — DEVICE TYPE IN FULL ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT948 FZT949 UNIT Collector-Base Voltage VCBO -40 -50 V Collector-Emitter Voltage VCEO -20 -30 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -20 A Continuous Collector Current IC -6 -5.5 A Power Dissipation at Tamb=25°C Ptot 3 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum FZT948 FZT949 C C E B TBA

• amps


• mv ic


• ic - collector current


• ns ns


• high performance


• collector-base breakdown


• collector-emitter breakdown