Silicon Carbide Drives Material Innovation for High Power Electronics, Says Frost & Sullivan

Silicon Carbide Drives Material Innovation for High Power Electronics, Says Frost & Sullivan PR Newswire MOUNTAIN VIEW, California, June 6, 2012 - Power electronics switch from silicon to silicon carbide due to its superior properties MOUNTAIN VIEW, California, June 6, 2012 /PRNewswire/ -- Due to its superior thermal and electrical properties, Silicon Carbide (SiC), a wide band gap material, has emerged as a key enabling material that has the potential to displace silicon based insulated gate bipolar transistors (IGBTs), metal oxide semiconductor field effect transistors (MOSFETs), diodes and rectifiers – specifically in the high power electronics area for applications in photo voltaic panels, hybrid/electric cars, high- power industrial drives, motor drives, smart grids and power utilities. New analysis from Frost & Sullivan (http://www.technicalinsights.frost.com), Silicon Carbide Electronics —Technology Market Penetration and Roadmapping, finds that SiC-based power electronics are well positioned to meet some of the key performance criteria, such as decreased overall system costs and enhanced system efficiency, for emerging applications such as hybrid vehicles and inverters for solar energy. If you are interested in more information on this research, please send an email to Jeannette Garcia, Corporate Communications, at jeannette.garcia@frost.