IRLR U120N HEXFET® Power MOSFET

Niveau: Secondaire, Lycée, Terminale
IRLR/U120N HEXFET® Power MOSFET S D G VDSS = 100V RDS(on) = 0.185? ID = 10ADescription 5/11/98 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.0 A IDM Pulsed Drain Current ?? 35 PD @TC = 25°C Power Dissipation 48 W Linear Derating Factor 0.32 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy?? 85 mJ IAR Avalanche Current?? 6.0 A EAR Repetitive Avalanche Energy?? 4.8 mJ dv/dt Peak Diode Recovery dv/dt ? 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Parameter Typ. Max. Units R?JC Junction-to-Case ––– 3.1 R?JA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W R?JA Junction-to-Ambient ––– 110 Thermal Resistance D -P A K T O -252A A I-P A K T O -251AA l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

• power dissipation


• tj ≤


• source current


• drain current


• fully avalanche


• diode forward


• typical output


• µs