IRL3103S L HEXFET® Power MOSFET

Niveau: Secondaire, Lycée, Terminale
IRL3103S/L HEXFET® Power MOSFET PD - 91338F l Advanced Process Technology l Surface Mount (IRL3103S) l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Parameter Typ. Max. Units R?JC Junction-to-Case ––– 1.4 R?JA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 Thermal Resistance °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V? 64 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V? 45 A IDM Pulsed Drain Current ?? 220 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy?? 240 mJ IAR Avalanche Current? 34 A EAR Repetitive Avalanche Energy? 11 mJ dv/dt Peak Diode Recovery dv/dt ?? 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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