IRL2505 HEXFET® Power MOSFET

Niveau: Secondaire, Lycée, Terminale
IRL2505 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 is universally preferred for all commercial- Industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Description VDSS = 55V RDS(on) = 0.008? ID = 104A S D G Logic-Level Gate Drive TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 104 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74 A IDM Pulsed Drain Current 360 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 500 mJ IAR Avalanche Current 54 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and 55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

• tj ≤


• source current


• body diode


• junction temperature


• typical output


• current based


• maximum effective


• absolute maximum