IRF9540N HEXFET® Power MOSFET

Niveau: Secondaire, Lycée, Terminale
IRF9540N HEXFET® Power MOSFET PD - 91437B Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -23 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -16 A IDM Pulsed Drain Current ? -76 PD @TC = 25°C Power Dissipation 140 W Linear Derating Factor 0.91 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy? 430 mJ IAR Avalanche Current? -11 A EAR Repetitive Avalanche Energy? 14 mJ dv/dt Peak Diode Recovery dv/dt ? -5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units R?JC Junction-to-Case ––– 1.1 R?CS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W R?JA Junction-to-Ambient ––– 62 Thermal Resistance VDSS = -100V RDS(on) = 0.117? ID = -23A l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated 5/13/98 S D G TO-220AB Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

• source current


• drain current


• thermal response


• avalanche energy?


• diode forward


• typical output


• width ≤


• voltage temp