IRF540N HEXFET® Power MOSFET

Niveau: Secondaire, Lycée, Terminale
IRF540N HEXFET® Power MOSFET PD - 91341A S D G VDSS = 100V RDS(on) = 0.052? ID = 33A TO-220AB 5/13/98 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A IDM Pulsed Drain Current ? 110 PD @TC = 25°C Power Dissipation 140 W Linear Derating Factor 0.91 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy? 300 mJ IAR Avalanche Current? 16 A EAR Repetitive Avalanche Energy? 14 mJ dv/dt Peak Diode Recovery dv/dt ? 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units R?JC Junction-to-Case ––– 1.1 R?CS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W R?JA Junction-to-Ambient ––– 62 Thermal Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

• units conditions


• tj ≤


• source current


• drain current


• fully avalanche


• thermal response


• diode forward


• typical output