HEXFET® Power MOSFET IRFI540N

Niveau: Secondaire, Lycée, Terminale
HEXFET® Power MOSFET IRFI540N PD - 9.1361A 3/16/98 VDSS = 100V RDS(on) = 0.052? ID = 20AS D G TO-220 FULLPAK l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS ? l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Parameter Min. Typ. Max. Units R?JC Junction-to-Case –––– –––– 2.8 R?JA Junction-to-Ambient –––– –––– 65 Thermal Resistance Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 14 A IDM Pulsed Drain Current ?? 110 PD @TC = 25°C Power Dissipation 54 W Linear Derating Factor 0.36 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ?? 300 mJ IAR Avalanche Current?? 16 A EAR Repetitive Avalanche Current? 5.4 mJ dv/dt Peak Diode Recovery dv/dt ?? 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Absolute Maximum Ratings Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

• tj ≤


• junction tem


• body diode


• junction temperature


• operating area


• typical output


• temperature range °c


• µs