1Motorola Thyristor Device Data

Niveau: Secondaire, Lycée, Terminale
1Motorola Thyristor Device Data Silicon Controlled Rectifiers . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts • 300 A Surge Current Capability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit *Peak Forward and Reverse Blocking Voltage(1) (Gate Open, TJ = 25 to 125°C) 2N6504 2N6505 2N6507 2N6508 2N6509 VDRM, VRRM 50 100 400 600 800 Volts Forward Current (TC = 85°C) (180° Conduction Angle) IT(RMS) IT(AV) 25 16 Amps Peak Non-repetitive Surge Current — 8.3 ms (1/2 Cycle, Sine Wave) 1.5 ms ITSM 300 350 Amps Forward Peak Gate Power PGM 20 Watts Forward Average Gate Power PG(AV) 0.5 Watt Forward Peak Gate Current IGM 2 Amps Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C *THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R?JC 1.5 °C/W *Indicates JEDEC Registered Data.

• state forward


• voltage rating


• vtm —


• junction temperature


• turn-off time


• temperature range


• gate open


• current